University of Connecticut

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Condensed Matter Physics Seminar

Thursday, April 8, 2010
2:00pm – 3:30pm

Storrs Campus
Gant Science Complex P-121

Professor Seongshik Oh, Department of Physics & Astronomy, Rutgers University

“Past and Future of Atomic-Layer Engineering: Semiconductors, Complex Oxides, and Topological Insulators.”

I will first go over the history of atomic-layer engineering, which was first made possible in III-V semiconductors in 1980s by MBE (Molecular Beam Epitaxy), and later in complex oxides in 1990s by MBE and in 2000s by PLD (Pulsed Laser Deposition). The challenges and benefits of atomic-layer engineering in complex-oxides compared to those in semiconductors, and the pros and cons of MBE vs PLD will be discussed. I will also review the capabilities and limitations of previous oxide MBE systems, and describe the new developments in our lab. Then, I will describe our ongoing effort to grow a topological insulator (Bi2Se3), and plan for topological insulators and complex-oxide hetero structures. If time allows, I will also discuss the results of a side project regarding the role of oxygen vacancies for metal-insulator transition and resistive memory effect in complex oxides.

Contact:

Dawn Rawlinson dawn.rawlinson@uconn.edu 486-4916

Physics Department (primary)

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